Negative differential resistance (NDR), which describes a decrease in electrical current as the applied bias increases, has always been one of the hottest topics in solid-state electronic devices since L. Esaki first demonstrated this phenomenon in heavily-doped Ge p?n junctions in 1958. Researchers now report the modulation of a unique room-temperature NDR effect with high peak current in ambipolar black phosphorus transistors. The simplicity of this structure, combined with the recent ...
