Nonvolatile resistive memory (NVRM), also called a 'memristor', is an emerging technology that offers the possibility of in-memory computation and thus holds promise to overcome the von Neumann bottleneck. NVRM is a two-terminal device but, unlike an ordinary resistor, it exhibits hysteresis in input-output characteristics and thus can be also be used as memory. A new theory suggests that such resistive switching is an intrinsic property of a vacancy-inhabited two-dimensional materials ...
