Reliability and Qualification of New GaN HEMTs Technology
| To view this email as a web page, go here. |
The Latest in gallium nitride on silicon (GaN-on-Si) HEMTs (high electron mobility transistors) represent a dramatic improvement in power conversion switching device figure of merit (FOM) with outstanding sytem performance enabling higher efficiency, power density and reduced system cost.
This white paper describes the comprehensive four-per process that is used to successfully qualify this new technology and products. Key failure mechanisms are described, and the means to ensure safe and reliable operation in a wide variety of applications are provided. |
|
|
|
|
| | | | SUBSCRIBE | ABOUT US | ADVERTISE | | We respect your right to privacy - view our policy here. | | This mailbox is unattended, so please do not reply to this message. Contact us for assistance. | | If you no longer wish to receive these emails - unsubscribe here. | This email was sent by: ECN
100 Enterprise Drive - Suite 600 - Rockaway, NJ 07866-2129 | | © 2018 ECN. All rights reserved. |
|
|
|
|
|
|
|
